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NVD4810NT4G-TB01

NVD4810NT4G-TB01

NVD4810NT4G-TB01

onsemi

MOSFET N-CH 30V 9A/54A DPAK-3

compliant

NVD4810NT4G-TB01 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 11.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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