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NVBG045N065SC1

NVBG045N065SC1

NVBG045N065SC1

onsemi

SIC MOS D2PAK-7L 650V

non-compliant

NVBG045N065SC1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $8.56816 $8.56816
500 $8.4824784 $4241.2392
1000 $8.3967968 $8396.7968
1500 $8.3111152 $12466.6728
2000 $8.2254336 $16450.8672
2500 $8.139752 $20349.38
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 325 V
FET Feature -
Power Dissipation (Max) 242W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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