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NTZS3151PT1G

NTZS3151PT1G

NTZS3151PT1G

onsemi

MOSFET P-CH 20V 860MA SOT563

non-compliant

NTZS3151PT1G Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.11903 -
8,000 $0.11270 -
12,000 $0.10321 -
28,000 $0.09689 -
100,000 $0.08614 -
10408 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 458 pF @ 16 V
FET Feature -
Power Dissipation (Max) 170mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-563
Package / Case SOT-563, SOT-666
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