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NTMSD3P102R2

NTMSD3P102R2

NTMSD3P102R2

onsemi

MOSFET P-CH 20V 2.34A 8SOIC

non-compliant

NTMSD3P102R2 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.45640 -
2466 items
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Bom Cost Down
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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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