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NTMS4177PR2G

NTMS4177PR2G

NTMS4177PR2G

onsemi

MOSFET P-CH 30V 6.6A 8SOIC

non-compliant

NTMS4177PR2G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.33431 -
5,000 $0.31126 -
12,500 $0.29973 -
25,000 $0.29344 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V
FET Feature -
Power Dissipation (Max) 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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