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NTMS4101PR2

NTMS4101PR2

NTMS4101PR2

onsemi

MOSFET P-CH 20V 6.9A 8SOIC

compliant

NTMS4101PR2 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.40750 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.38W (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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