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NTMFS4H02NFT3G

NTMFS4H02NFT3G

NTMFS4H02NFT3G

onsemi

MOSFET N-CH 25V 37A/193A 5DFN

non-compliant

NTMFS4H02NFT3G Pricing & Ordering

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Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2652 pF @ 12 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 83W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
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