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NTMD6N02R2G

NTMD6N02R2G

NTMD6N02R2G

onsemi

MOSFET 2N-CH 20V 3.92A 8SOIC

non-compliant

NTMD6N02R2G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.28710 -
5,000 $0.26730 -
12,500 $0.25740 -
25,000 $0.25200 -
539 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.92A
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V
Power - Max 730mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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