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NTHS5441T1G

NTHS5441T1G

NTHS5441T1G

onsemi

MOSFET P-CH 20V 3.9A CHIPFET

non-compliant

NTHS5441T1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.24245 -
6,000 $0.22681 -
15,000 $0.21117 -
30,000 $0.20022 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 5 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ChipFET™
Package / Case 8-SMD, Flat Lead
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