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NTHS4101PT1G

NTHS4101PT1G

NTHS4101PT1G

onsemi

MOSFET P-CH 20V 4.8A CHIPFET

non-compliant

NTHS4101PT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.36015 -
6,000 $0.33531 -
15,000 $0.32289 -
30,000 $0.31612 -
2500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 16 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ChipFET™
Package / Case 8-SMD, Flat Lead
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