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NTF6P02T3G

NTF6P02T3G

NTF6P02T3G

onsemi

MOSFET P-CH 20V 10A SOT223

non-compliant

NTF6P02T3G Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.38500 -
8,000 $0.36575 -
12,000 $0.35200 -
28,000 $0.35000 -
3100 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V
FET Feature -
Power Dissipation (Max) 8.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA
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