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NTD6600N-1G

NTD6600N-1G

NTD6600N-1G

onsemi

MOSFET N-CH 100V 12A IPAK

non-compliant

NTD6600N-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.41000 $0.41
500 $0.4059 $202.95
1000 $0.4018 $401.8
1500 $0.3977 $596.55
2000 $0.3936 $787.2
2500 $0.3895 $973.75
1425 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 146mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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