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NTD4979N-35G

NTD4979N-35G

NTD4979N-35G

onsemi

MOSFET N-CH 30V 9.4A/41A IPAK

compliant

NTD4979N-35G Pricing & Ordering

Quantity Unit Price Ext. Price
900 $0.34941 $314.469
10875 items
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 837 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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