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NTC040N120SC1

NTC040N120SC1

NTC040N120SC1

onsemi

SIC MOS WAFER SALES 40MOHM 1200V

compliant

NTC040N120SC1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $18.93000 $18.93
500 $18.7407 $9370.35
1000 $18.5514 $18551.4
1500 $18.3621 $27543.15
2000 $18.1728 $36345.6
2500 $17.9835 $44958.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V
FET Feature -
Power Dissipation (Max) 348W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
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