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NTAT6H406NT4G

NTAT6H406NT4G

NTAT6H406NT4G

onsemi

MOSFET N-CH 80V 175A ATPAK

compliant

NTAT6H406NT4G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.86810 -
16844 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 175A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8040 pF @ 40 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK/ATPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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