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HUF75617D3ST

HUF75617D3ST

HUF75617D3ST

onsemi

MOSFET N-CH 100V 16A TO252AA

compliant

HUF75617D3ST Pricing & Ordering

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2,500 $0.42706 -
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
FET Feature -
Power Dissipation (Max) 64W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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