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HGT1S10N120BNST

HGT1S10N120BNST

HGT1S10N120BNST

onsemi

IGBT 1200V 35A 298W TO263AB

compliant

HGT1S10N120BNST Pricing & Ordering

Quantity Unit Price Ext. Price
800 $1.89606 $1516.848
1,600 $1.61366 -
2,400 $1.54125 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263)
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