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FQD6N60CTM-WS

FQD6N60CTM-WS

FQD6N60CTM-WS

onsemi

MOSFET N-CH 600V 4A DPAK

non-compliant

FQD6N60CTM-WS Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.76740 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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