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FQD4N20TM

FQD4N20TM

FQD4N20TM

onsemi

MOSFET N-CH 200V 3A DPAK

non-compliant

FQD4N20TM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.30836 -
5,000 $0.28823 -
12,500 $0.27816 -
25,000 $0.27267 -
435 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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