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FQD12N20LTM

FQD12N20LTM

FQD12N20LTM

onsemi

MOSFET N-CH 200V 9A DPAK

compliant

FQD12N20LTM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.38738 -
5,000 $0.36209 -
12,500 $0.34945 -
25,000 $0.34255 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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