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FQD11P06TF

FQD11P06TF

FQD11P06TF

onsemi

MOSFET P-CH 60V 9.4A DPAK

non-compliant

FQD11P06TF Pricing & Ordering

Quantity Unit Price Ext. Price
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500 $0 $0
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2500 $0 $0
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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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