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FQB6N80TM

FQB6N80TM

FQB6N80TM

onsemi

MOSFET N-CH 800V 5.8A D2PAK

non-compliant

FQB6N80TM Pricing & Ordering

Quantity Unit Price Ext. Price
800 $1.32969 $1063.752
1,600 $1.22567 -
2,400 $1.14565 -
5,600 $1.10565 -
3 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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