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FQB55N10TM

FQB55N10TM

FQB55N10TM

onsemi

MOSFET N-CH 100V 55A D2PAK

non-compliant

FQB55N10TM Pricing & Ordering

Quantity Unit Price Ext. Price
800 $1.41508 $1132.064
1,600 $1.29865 -
2,400 $1.20909 -
5,600 $1.16431 -
1387 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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