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FQB33N10LTM

FQB33N10LTM

FQB33N10LTM

onsemi

MOSFET N-CH 100V 33A D2PAK

compliant

FQB33N10LTM Pricing & Ordering

Quantity Unit Price Ext. Price
800 $0.80510 $644.08
1,600 $0.73115 -
2,400 $0.68493 -
5,600 $0.65257 -
400 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 127W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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