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FQA10N80C-F109

FQA10N80C-F109

FQA10N80C-F109

onsemi

MOSFET N-CH 800V 10A TO3P

non-compliant

FQA10N80C-F109 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.02000 $4.02
10 $3.59000 $35.9
450 $2.65669 $1195.5105
900 $2.15408 $1938.672
1,350 $2.01047 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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