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Name | Value |
---|---|
Product Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Capacitance @ Vr, F | 247pF @ 1V, 100kHz |
Mounting Type | Surface Mount |
Package / Case | 4-PowerTSFN |
Supplier Device Package | 4-PQFN (8x8) |
Operating Temperature - Junction | -55°C ~ 175°C |
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