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FDT3612

FDT3612

FDT3612

onsemi

MOSFET N-CH 100V 3.7A SOT223-4

non-compliant

FDT3612 Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.24898 -
8,000 $0.23181 -
12,000 $0.22322 -
28,000 $0.21854 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 632 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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