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FDS6900AS-G

FDS6900AS-G

FDS6900AS-G

onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

compliant

FDS6900AS-G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A, 8.2A
Rds On (Max) @ Id, Vgs 27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Power - Max 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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