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FDS6900AS-G

FDS6900AS-G

FDS6900AS-G

onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

non-compliant

FDS6900AS-G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A, 8.2A
Rds On (Max) @ Id, Vgs 27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Power - Max 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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