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FDN359BN

FDN359BN

FDN359BN

onsemi

MOSFET N-CH 30V 2.7A SUPERSOT3

non-compliant

FDN359BN Pricing & Ordering

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6,000 $0.13146 -
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30,000 $0.11280 -
75,000 $0.10856 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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