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FDN357N

FDN357N

FDN357N

onsemi

MOSFET N-CH 30V 1.9A SUPERSOT3

non-compliant

FDN357N Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.15192 -
6,000 $0.14271 -
15,000 $0.13350 -
30,000 $0.12245 -
75,000 $0.11785 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 10 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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