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FDN352AP

FDN352AP

FDN352AP

onsemi

MOSFET P-CH 30V 1.3A SUPERSOT3

non-compliant

FDN352AP Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.12524 -
6,000 $0.11765 -
15,000 $0.11006 -
30,000 $0.10095 -
75,000 $0.09715 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4.5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 15 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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