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FDMS86183

FDMS86183

FDMS86183

onsemi

MOSFET N-CH 100V 51A 8PQFN

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FDMS86183 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.62971 -
6,000 $0.59822 -
15,000 $0.57573 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 6 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1515 pF @ 50 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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