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FDMS8050ET30

FDMS8050ET30

FDMS8050ET30

onsemi

MOSFET N-CH 30V 55A/423A POWER56

non-compliant

FDMS8050ET30 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.72224 -
6,000 $1.65750 -
0 items
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta), 423A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.65mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 3V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 22610 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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