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FDMS1D4N03S

FDMS1D4N03S

FDMS1D4N03S

onsemi

MOSFET N-CH 30V 211A 8PQFN

non-compliant

FDMS1D4N03S Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.99465 -
6,000 $0.95781 -
0 items
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Bom Cost Down
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 211A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.09mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 10250 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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