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FDMC2610

FDMC2610

FDMC2610

onsemi

MOSFET N-CH 200V 2.2A/9.5A 8MLP

compliant

FDMC2610 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.76478 -
6,000 $0.73645 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 100 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN
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