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FDD8882

FDD8882

FDD8882

onsemi

MOSFET N-CH 30V 12.6/55A TO252AA

compliant

FDD8882 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.42070 -
5,000 $0.40083 -
12,500 $0.38663 -
25,000 $0.38457 -
503 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12.6A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 15 V
FET Feature -
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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