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FDD5612

FDD5612

FDD5612

onsemi

MOSFET N-CH 60V 5.4A TO252-3

non-compliant

FDD5612 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.42739 -
5,000 $0.40720 -
12,500 $0.39278 -
25,000 $0.39068 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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