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FDD1600N10ALZ

FDD1600N10ALZ

FDD1600N10ALZ

onsemi

MOSFET N-CH 100V 6.8A TO252

compliant

FDD1600N10ALZ Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.34037 -
5,000 $0.31815 -
12,500 $0.30704 -
25,000 $0.30098 -
7303 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.61 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 50 V
FET Feature -
Power Dissipation (Max) 14.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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