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FDC645N

FDC645N

FDC645N

onsemi

MOSFET N-CH 30V 5.5A SUPERSOT6

non-compliant

FDC645N Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.36940 -
6,000 $0.34393 -
15,000 $0.33119 -
30,000 $0.32424 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
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