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FDC642P-F085

FDC642P-F085

FDC642P-F085

onsemi

MOSFET P-CH 20V 4A SUPERSOT6

compliant

FDC642P-F085 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25558 -
6,000 $0.23909 -
15,000 $0.22260 -
30,000 $0.21106 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
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