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FDB1D7N10CL7

FDB1D7N10CL7

FDB1D7N10CL7

onsemi

MOSFET N-CH 100V 268A D2PAK

compliant

FDB1D7N10CL7 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $8.05524 $6444.192
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 268A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 15V
Rds On (Max) @ Id, Vgs 1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 163 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11600 pF @ 50 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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