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FDB0300N1007L

FDB0300N1007L

FDB0300N1007L

onsemi

MOSFET N-CH 100V 200A TO263-7

non-compliant

FDB0300N1007L Pricing & Ordering

Quantity Unit Price Ext. Price
800 $3.62443 $2899.544
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8295 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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