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FCH110N65F-F155

FCH110N65F-F155

FCH110N65F-F155

onsemi

MOSFET N-CH 650V 35A TO247

non-compliant

FCH110N65F-F155 Pricing & Ordering

Quantity Unit Price Ext. Price
450 $3.65967 $1646.8515
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4895 pF @ 100 V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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