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FCD9N60NTM

FCD9N60NTM

FCD9N60NTM

onsemi

MOSFET N-CH 600V 9A DPAK

non-compliant

FCD9N60NTM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.01021 -
5,000 $0.97493 -
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Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 100 V
FET Feature -
Power Dissipation (Max) 92.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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