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FCA20N60-F109

FCA20N60-F109

FCA20N60-F109

onsemi

DISCRETE MOSFET

compliant

FCA20N60-F109 Pricing & Ordering

Quantity Unit Price Ext. Price
450 $2.81902 $1268.559
12150 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3080 pF @ 25 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
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