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ECH8309-TL-H

ECH8309-TL-H

ECH8309-TL-H

onsemi

MOSFET P-CH 12V 9.5A 8ECH

compliant

ECH8309-TL-H Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.28645 -
6,000 $0.26775 -
15,000 $0.25840 -
30,000 $0.25330 -
2896 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 16mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 6 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-ECH
Package / Case 8-SMD, Flat Lead
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