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BVSS123LT1G

BVSS123LT1G

BVSS123LT1G

onsemi

MOSFET N-CH 100V 170MA SOT23-3

non-compliant

BVSS123LT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.09812 -
6,000 $0.09291 -
15,000 $0.08508 -
30,000 $0.07987 -
75,000 $0.07205 -
150,000 $0.07063 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V
FET Feature -
Power Dissipation (Max) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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