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2SJ656

2SJ656

2SJ656

onsemi

MOSFET P-CH 100V 18A TO220ML

non-compliant

2SJ656 Pricing & Ordering

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1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
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2500 $0 $0
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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 75.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 20 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220ML
Package / Case TO-220-3 Full Pack
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