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PSMN9R0-30YL,115

PSMN9R0-30YL,115

PSMN9R0-30YL,115

NXP USA Inc.

MOSFET N-CH 30V 61A LFPAK56

non-compliant

PSMN9R0-30YL,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.17000 $0.17
500 $0.1683 $84.15
1000 $0.1666 $166.6
1500 $0.1649 $247.35
2000 $0.1632 $326.4
2500 $0.1615 $403.75
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1006 pF @ 12 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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