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PSMN7R8-120ESQ

PSMN7R8-120ESQ

PSMN7R8-120ESQ

NXP USA Inc.

POWER FIELD-EFFECT TRANSISTOR, 7

non-compliant

PSMN7R8-120ESQ Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.14400 -
430 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9473 pF @ 60 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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